| 摘要 |
The present invention is to provide a method of processing a semiconductor wafer, comprising the steps of: sticking a support wafer onto a front surface of a semiconductor wafer having a pattern formed thereon, with a two-sided adhesive sheet; and performing a thinning process on a rear surface of the semiconductor wafer. By sticking the support wafer onto the semiconductor wafer with the two-sided adhesive sheet, sufficient strength and rigidity can be obtained even after a thinning process is carried out. |
