| 发明名称 |
NITRIDING METHOD FOR INSULATION FILM, SEMICONDUCTOR DEVICE AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE, SUBSTRATE TREATING DEVICE AND SUBSTRATE TREATING METHOD |
| 摘要 |
A method of nitriding an insulation film includes the steps of forming nitrogen radicals by high-frequency plasma, and causing nitridation in a surface of an insulation film containing therein oxygen, by supplying the nitrogen radicals to the surface of the insulation film. <IMAGE> <IMAGE>
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| 申请公布号 |
KR20040017338(A) |
申请公布日期 |
2004.02.26 |
| 申请号 |
KR20047000890 |
申请日期 |
2002.12.05 |
| 申请人 |
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发明人 |
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| 分类号 |
H01L21/336;H01L21/00;H01L21/205;H01L21/28;H01L21/314;H01L21/316;H01L29/51 |
主分类号 |
H01L21/336 |
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