发明名称 METHOD AND APPARATUS FOR CHECKING MASK, METHOD AND APPARATUS FOR EXPOSING TO CHARGED PARTICLE BEAM
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method and an apparatus for accurately checking the dust adhering to a pattern (opening) of a stencil mask with high throughput. <P>SOLUTION: The apparatus 1 for checking the mask includes a laser beam source 3 for irradiating the mask 10 with a probe beam, and a photodiode array 5 for observing the distribution of the probe beam which is transmitted or scattered to the pattern opening 11. The distribution of the transmitted beam transmitted through the opening 11 becomes the same as that of the pattern on the mask. When the dust 3 is adhering to the interior of the pattern (in the opening), the transmitted beam is abnormally scattered by the dust so that a distributed shape is changed, and hence the adhesion of the dust can be judged. In this case, since the scattered beam is merely observed, it is not necessary to perform image processing, and the throughput of checking the mask can be raised. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004063545(A) 申请公布日期 2004.02.26
申请号 JP20020216359 申请日期 2002.07.25
申请人 NIKON CORP 发明人 KAWADA SHINTARO
分类号 G01N21/956;G03F1/84;G03F7/20;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 主分类号 G01N21/956
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