| 摘要 |
PROBLEM TO BE SOLVED: To provide a technique for realizing a quick turn around time of a semiconductor device having a dual damascene wiring by reducing a capacity between wirings of the damascene wiring and an improvement in a manufacturing yield. SOLUTION: When a wiring groove is formed by dry etching an insulating film 21 with a photoresist film 23 patterned in a groove pattern as a mask, an etching ending point of the film 21 is detected by using an optical reflection interference waveform monitor or a plasma luminescence ending point monitor, thereby dry-etching only the film 21. COPYRIGHT: (C)2004,JPO
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