METHOD FOR MANUFACTURING SUBSTRATE FOR SEMICONDUCTOR DEVICE, SUBSTRATE FOR SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a substrate for a semiconductor device having a low defect density over a wide area. SOLUTION: A porous anodized alumina film 3 having a number of micropores is provided on a base substrate 1. A large number of microholes 1b are formed on the surface of the base substrate 1 by subjecting the surface of the base substrate 1 to etching treatment by using the alumina film 3 as a mask. The alumina film 3 is removed and thereafter a GaN layer 2 is formed by crystal growth on the surface of the base substrate 1. COPYRIGHT: (C)2004,JPO