发明名称 |
Optical semiconductor device and method of fabricating the same |
摘要 |
An optical semiconductor device includes an optical semiconductor element, a semiconductor region, and a buried layer. The optical semiconductor element is formed on a semiconductor substrate. The semiconductor region opposes the optical semiconductor element and essentially surrounds the optical semiconductor element to form walls. The buried layer is arranged between the walls of the semiconductor region and the optical semiconductor element and formed by vapor phase epitaxy. In this optical semiconductor device, a distance between the wall of the semiconductor region and a side wall of the optical semiconductor element is larger in a portion in which the growth rate of the vapor phase epitaxy in a horizontal direction from the side wall of the optical semiconductor element and the wall of the semiconductor region is higher.
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申请公布号 |
US2004038434(A1) |
申请公布日期 |
2004.02.26 |
申请号 |
US20030645437 |
申请日期 |
2003.08.20 |
申请人 |
KOBAYASHI FUMIHIKO;MIYAZAWA TAKE;MORI HIDEFUMI;NAKANO JUN-ICHI |
发明人 |
KOBAYASHI FUMIHIKO;MIYAZAWA TAKE;MORI HIDEFUMI;NAKANO JUN-ICHI |
分类号 |
G02B6/12;G02B6/125;G02F1/025;G02F1/225;H01L27/15;H01L33/00;H01S3/098;H01S5/026;H01S5/06;H01S5/065;H01S5/10;H01S5/183;H01S5/22;H01S5/227;H01S5/40;H01S5/42;H01S5/50;(IPC1-7):H01L21/00 |
主分类号 |
G02B6/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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