发明名称 |
Electric pumping of rare-earth-doped silicon for optical emission |
摘要 |
A structure having a p-n junction in a semiconductor having a first p-type region and a first n-type region along with a region located in the vicinity of the p-n junction that is doped with a rare-earth element. In addition, the structure includes a charge source coupled to one of the p-type region and n-type region for providing charge carriers to excite atoms of the rare-earth element. Also provided is a method for producing the structure that includes providing a bipolar junction transistor; doping a region in a collector of the transistor with a rare-earth element; and biasing the transistor to generate light emission from the rare-earth element doped region.
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申请公布号 |
US2004037335(A1) |
申请公布日期 |
2004.02.26 |
申请号 |
US20030461919 |
申请日期 |
2003.06.16 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
PEKARIK JOHN J.;VARHUE WATER J. |
分类号 |
C09K11/77;H01L33/00;H01L33/34;H01S3/0959;H01S3/16;H01S5/00;H01S5/30;H01S5/50;(IPC1-7):H01S5/00 |
主分类号 |
C09K11/77 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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