发明名称 Device parameter and gate performance simulation based on wafer image prediction
摘要 A circuit, gate, or device parameter simulation includes data on the initial conditions of manufacture, including illumination conditions on a stepper, material parameters for processing conditions, and chip layout. Optical effects and processing tolerances may be accounted for in the simulation of the final device performance characteristics. The circuit, gate, or device parameter simulation may incorporate optical proximity code software. Simulated active and passive components are generated by the circuit, gate, or device parameter simulation from the simulated patterned layers on the substrate. Feedback may be provided to the circuit, gate, or device parameter simulation to optimize performance.
申请公布号 US2004040000(A1) 申请公布日期 2004.02.26
申请号 US20020223931 申请日期 2002.08.20
申请人 TARAVADE KUNAL;CALLAN NEAL;STRELKOVA NADYA 发明人 TARAVADE KUNAL;CALLAN NEAL;STRELKOVA NADYA
分类号 G06F17/50;(IPC1-7):G06F17/50 主分类号 G06F17/50
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