| 摘要 |
A method of making a semiconductor device (10) includes depositing a first conductive layer (50) on a first vertical surface (41) of a multilayer structure (17, 18, 19, 20) formed on a horizontal surface of a semiconductor substrate (14, 16). The first conductive layer (50) controls a channel (70) of the semiconductor device at a second surface (40) perpendicular to the first surface. The method further includes forming first dielectric film (32) between the first conductive layer (50) and the vertical surface on the multilayer, etching it to form a gap (53) between the first conductive layer (50) and a control electrode (68) formed in the multilayer structure and depositing a conductive material (56) in the gap to electrically connect the first conductive layer to the control electrode. |
