发明名称 |
UNITED METHOD AND APPARATUS TO PREVENT LATERAL OXIDATION IN A TRANSISTOR UTILIZING AN ULTRA THIN OXYGEN-DIFFUSION BARRIER |
摘要 |
A method and apparatus of preventing lateral oxidation through gate dielectrics that are highly permeable to oxygen diffusion, such as high-k gate dielectrics. According to one embodiment of the invention, a gate structure is formed on a substrate, the gate structure having an oxygen-permeable gate dielectric. An oxygen diffusion barrier is then formed on the sidewalls of the gate structure to prevent oxygen from diffusing laterally into the oxygen-permeable gate dielectric, thus preventing oxidation to the substrate underneath the gate dielectric or to the electrically conductive gate electrode overlying the gate dielectric. |
申请公布号 |
WO2004017393(A2) |
申请公布日期 |
2004.02.26 |
申请号 |
WO2003US24108 |
申请日期 |
2003.07.31 |
申请人 |
INTEL CORPORATION |
发明人 |
ARGHAVANI, REZA;STOKLEY, PATRICIA;CHAU, ROBERT |
分类号 |
H01L21/28;H01L21/336;H01L29/51;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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