SEMICONDUCTOR LIGHT EMITTING ELEMENT, ITS MANUFACTURING METHOD, SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element which can reduce an operating voltage even if the p-type layer containing an Al composition of 10% or more such as a p-type AlGaN electron blocking layer or the like is incorporated and can sufficiently obtain an electron blocking effect due to its p-type layer. SOLUTION: In the semiconductor light emitting element using a nitride III-V compound semiconductor having a structure, an active layer 7 is sandwiched between an n-type side clad layer 5 and p-type side clad layers 9, 12, and has the p-type AlGaN electron blocking layer containing an Al composition of 10% or more. In of 1×1019/cm3or more is included in an at least part of the p-type AlGaN electron blocking layer 11. For example, an In concentration is made substantially uniform, and is set to 1×1019/cm3to less than 1×1022/cm3. COPYRIGHT: (C)2004,JPO