| 摘要 |
PROBLEM TO BE SOLVED: To prevent an yield of a semiconductor device from decreasing in dry cleaning in a manufacturing process of the device. SOLUTION: A wafer 4 is installed in a vacuum container 1. A main surface of the wafer 4 is cleaned by adopting in combination an electrical action and a chemical action of a plasma of a first gas seed generated by a plasma generating means 2, and a physical action of a frictional stress of a high-speed gas flow formed by a planar structure 5 disposed in the vicinity of the main surface of the wafer 4. The wafer 4 after cleaning is treated by a plasma of a second gas seed in the same container 1, and then discharged to the atmosphere. COPYRIGHT: (C)2004,JPO
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