发明名称 CLEANING AND DRYING METHOD OF SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a cleaning and drying method of semiconductor substrate which can prevent adhesion of particles and generation of water-mark while a cleaning and drying apparatus of one-bus system is used. SOLUTION: The cleaning and drying method includes a substrate cleaning process for cleaning semiconductor wafers 3 with a chemical solution within a cleaning vessel 2 installed within a chamber 1, and a substrate drying process for drying the cleaned semiconductor wafers 3 within the chamber. In the method, a cleaning vessel cleaning process is executed, prior to the substrate cleaning process, to clean the cleaning vessel 2 with the cleaning solution including the oxidation agent such as aqueous solution of hydrogen peroxide. According to this method, the cleaning vessel 2 may be kept within the higher cleanliness. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004063513(A) 申请公布日期 2004.02.26
申请号 JP20020215919 申请日期 2002.07.25
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KAWAHARA HIROYUKI
分类号 F26B5/04;C11D7/54;H01L21/304;(IPC1-7):H01L21/304 主分类号 F26B5/04
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