发明名称 |
Semiconductor device and method of manufacturing same |
摘要 |
A semiconductor device including an N-type semiconductor substrate which includes arsenic as an impurity, a first electrode formed on a main surface of the N-type semiconductor substrate, a ground surface formed on another surface of the N-type semiconductor substrate, a second electrode formed on the ground surface and ohmically-contacted with the N-type semiconductor substrate, a semiconductor element formed in the N-type semiconductor substrate and flowing current between the first electrode and the second electrode during ON-state thereof. The device has a reduced ON-resistance thereof.
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申请公布号 |
US2004036140(A1) |
申请公布日期 |
2004.02.26 |
申请号 |
US20030651277 |
申请日期 |
2003.08.28 |
申请人 |
OKABE YOSHIFUMI;YAMAOKA MASAMI;KUROYANAGI AKIRA |
发明人 |
OKABE YOSHIFUMI;YAMAOKA MASAMI;KUROYANAGI AKIRA |
分类号 |
H01L21/28;H01L21/285;H01L21/304;H01L21/336;H01L29/06;H01L29/167;H01L29/34;H01L29/417;H01L29/45;H01L29/76;H01L29/78;H01L29/94;H01L31/062;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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