| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a film growth method, film thickness measurement method and epitaxial substrate which enable the measurement of film thickness of a GaN layer laminated onto a GaN substrate or an AlGaN layer. <P>SOLUTION: In the film growth method, an AlGaN layer 14 is formed on a GaN substrate 12, and a GaN layer 16 is laminated thereon, and is irradiated with light of a predetermined wavelength. The irradiated light is reflected on the surface of the GaN layer 16 and the interface between the GaN layer 16 and the AlGaN layer 14. Namely, since the reflection occurs not only on an upper surface 16a of the GaN layer 16 but also a lower surface 16b of the GaN layer 16, the mutual strengthening between the reflection light reflected on the upper surface 16a of the GaN layer and the reflection light reflected on the lower surface thereof is measured, so that the film thickness of the GaN layer 16 is measured. Thus, the film thickness of the GaN layer 16 being growing is measured in real time. <P>COPYRIGHT: (C)2004,JPO |
