HOT WALL HEATING CHEMICAL VAPOR-PHASE GROWTH APPARATUS AND METHOD OF MANUFACTURING EPITAXIAL WAFER USING THE APPAARTUS

摘要

PROBLEM TO BE SOLVED: To manufacture an epitaxial wafer at a low cost which prevents SiC from sticking to the back surface of the wafer and contamination of the inside wall of a reaction tube. SOLUTION: This hot wall heating chemical vapor-phase growth apparatus manufactures an epitaxial wafer by making epitaxial growth on a wafer substrate 2 placed inside the reactive gas flow path 11 of a susceptor 1. It has a first plate 7, bridging the left and right walls 5, 6 of the reactive gas flow path 11, and a second plate 8 disposed on a step 710 formed inside the support hole 70 made on the first plate 7. The wafer substrate 2 is placed on the second plate 8, and epitaxial growth is carried out on the wafer substrate 2. COPYRIGHT: (C)2004,JPO