| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMOS type solid-state image pickup element capable of accelerating the transfer speed of electric charges stored in a photoelectric conversion element, and easily forming the capacitor of a peripheral circuit part provided on the outer periphery of a light receiving part, and to provide its manufacturing method. SOLUTION: A transfer gate electrode connected to the respective photoelectric conversion elements of the light receiving part is turned to the 2-layer structure of a first transfer gate electrode and a second transfer gate electrode, and the second transfer gate electrode is constituted of a laminated part stacked with the first transfer gate electrode and a non-laminated part not stacked with the first transfer gate electrode. A first capacitor electrode of the capacitor formed at the peripheral circuit is formed together with the formation of the first transfer gate electrode, and a second capacitor electrode of the capacitor is formed together with the formation of the second transfer gate electrode. COPYRIGHT: (C)2004,JPO
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