| 摘要 |
PROBLEM TO BE SOLVED: To provide an internal voltage generating circuit capable of reducing power consumption at the time of standby of a semiconductor storage device without lowering drive capability of a booster pump and a level of a step-up voltage. SOLUTION: A voltage dividing circuit 40 outputs a partial pressure voltage EXT at the maximum output voltage level EXT2 which the boost pump 1 is capable of driving. A reference voltage generating circuit 2 outputs a first reference voltage VREFH equivalent to a target level of the step-up voltage. A level selecting circuit 41 compares voltage levels between the partial pressure voltage EXT and the first reference voltage VREFH, selects the signal lower in the voltage level, and inputs it to a level detecting circuit 3 as a second reference voltage VREF. COPYRIGHT: (C)2004,JPO
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