Semiconductor memory device storing ternary data signal

摘要

A memory cell in the SRAM has three storing/holding states, i.e., a state where two storage nodes store 0, 1; a state where the two storage nodes store 1, 0, and a state where the two storage nodes store 1, 1. Therefore, the number of memory cells can be reduced to a half compared to the conventional case where two memory cells were required to store three types of data signals.