| 摘要 |
A memory cell has: (i) semiconductor substrate (12) including an island (20) having top portion (24) and sidewall portion(s) (22); (ii) capacitor (30) contiguous with the sidewall portion; and (iii) transistor on top portion of the island and including a gate oxide layer on surface of top portion, gate on gate oxide layer, and first and second diffused regions in top portion spaced apart from each other. Independent claims are also included for a memory device comprising: (a) a semiconductor substrate and an array of the memory cell; and (b) a process for manufacturing the memory device comprising defining a semiconductor substrate, etching the substrate to form an array of islands having top and sidewall portions, doping the sidewall portion and a bottom surface, forming the dielectric layer contiguous with the sidewall portion, forming polysilicon layer contiguous with the dielectric layer, electrically isolating the array of islands with an insulating material, forming an oxide layer on surface of the top portion, forming gate on the oxide layer, and forming first and second diffused regions in the top portion.
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