EEPROM structure, has an additional gate or substrate capacitor on each cell

摘要

An EEPROM for a non-volatile semiconductor memory. A cell comprises a floating gate transistor with hot electron writing and Fowler-Nordheim tunneling current deletion. There is an additional gate capacitor and/or substrate capacitor at each cell so that a common writing voltage is applied to the floating gates of all cells. An Independent claim is also included for an integrated circuit having an EEPROM as above.