| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a group III nitride light emitting device having at least one p type layer in an active region. <P>SOLUTION: The group III nitride light emitting device includes an n type layer, the p type layer and the active region in which lights can be emitted between the p type layer and the n type layer. The active region includes at least one additonal p type layer. The p type layer of the active region may be a quantum well layer or a barrier layer. In some embodiments, both of the quantum well layer and the barrier layer in the active region are p type. In some embodiments, the mean dislocation density of the p type layer of the active region is smaller than about 5×10<SP>8</SP>cm<SP>-2</SP>. <P>COPYRIGHT: (C)2004,JPO |
