| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a chemical vapor deposition method of boron phosphide semiconductor layer and group III nitride semiconductor layer for easily forming the group III nitride semiconductor layer having good crystalline property in order to form, with the vapor phase growth method, the gourp III nitride semiconductor layer on the boron phosphide layer provided on a silicon single crystal substrate. <P>SOLUTION: First, an amorphous layer including boron and phosphorus which has a function to relax lattice mismatch between silicon single crystal and boron phosphide crystal layer is formed with the vapor phase growth method on the surface of a silicon (Si) single crystal substrate. Thereafter, the boron phosphide crystal layer is formed with the vapor phase deposition method by varying the the concentration of boron atoms supplied from the vapor phase deposition region and the supply concentration ratio of phosphorus source to the boron source (V/III ratio) within the unit period. Moreover, the group III nitride semiconductor layer is also formed with the vapor phase deposition method at the temperature for suppressing thermal modification property of the boron phosphide crystal layer. <P>COPYRIGHT: (C)2004,JPO |
