| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of etching more deeply a KTN/KLTN crystal film to easily form a waveguide. SOLUTION: This method is applied to process a crystal film which is expressed by the general expression of KTa<SB>1-x</SB>Nb<SB>x</SB>O<SB>3</SB>(0≤x≤1) or K<SB>1-y</SB>Li<SB>y</SB>Ta<SB>1-x</SB>Nb<SB>x</SB>O<SB>3</SB>(0≤x≤1, 0≤y≤1). This method comprises the steps of providing, on the crystal film, a mask material attained by laminating a resist and a kind or more kinds of metal thin film selected from a group of titanium, zirconium, niob, tantalum, molybdenum, vanazium, tangusten and chromium, and processing the crystal film with the ion beam etching, using the ion of gas of a kind or more kinds of substance selected from a group of nitrogen, argon, oxygen, chlorine, hydrogen chloride and boron trichloride. COPYRIGHT: (C)2004,JPO |
