| 摘要 |
To provide a method for manufacturing a high-performance field electron emission apparatus, wherein occurrence of damage to a CNT during a manufacturing step is prevented, and thereby, the CNT can adequately keep an inherent electron emission characteristic of exhibiting a large current density with a low threshold value. This method for manufacturing a field electron emission apparatus is related to the manufacture of a field electron emission apparatus using the CNT as an electron source. In the method, a protective film formation step is performed in order to form an aluminum film 4 as the protective film on the surface of the CNT film 2 during a manufacturing process of at least a part of the apparatus. The CNT surface structure is protected with this conductive protective film (aluminum film 4, 40), while the structure significantly affects the electron emission characteristic. Consequently, the electron emission characteristic inherent in the CNT can be adequately ensured and be exhibited.
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