发明名称 BACKSIDE METALLIZATION ON SIDES OF MICROELECTRONIC DICE FOR EFFECTIVE THERMAL CONTACT WITH HEAT DISSIPATION DEVICES
摘要 A microelectronic device and methods of fabricating the same comprising a microelectronic die (144, 144') having an active surface (104), a back surface (106), and at least one side. The microelectronic die side comprises a trench sidewall (124, 124'), a lip (142, 142') and a channel sidewall (140, 140'). A metallization layer (128) is disposed on the microelectronic die back surface (106) and the trench sidewall (124, 124').
申请公布号 WO03049152(A3) 申请公布日期 2004.02.26
申请号 WO2002US36576 申请日期 2002.11.15
申请人 INTEL CORPORATION 发明人 DIAS, RAJENDRA;CHANDRAN, BIJU
分类号 H01L23/367;H01L23/42;H01L29/06 主分类号 H01L23/367
代理机构 代理人
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