| 摘要 |
PCT No. PCT/FR97/01526 Sec. 371 Date Feb. 17, 1999 Sec. 102(e) Date Feb. 17, 1999 PCT Filed Aug. 26, 1997 PCT Pub. No. WO98/08664 PCT Pub. Date Mar. 5, 1998A process for obtaining at least one wafer of semiconducting material, including the step of cutting an ingot of semiconducting material along a longitudinal plane of the ingot to obtain a wafer with large dimensions. The wafer obtained may be used to make a Semiconductor on Insulator type substrate, for example a Silicon On Insulator substrate. |
