| 摘要 |
An apparatus and method for treating a substrate to deposit, clean or etch material on a substrate uses a first horizontal chuck to which a plurality of substrates is attached and electrically charged. Spaced closely to the first horizontal chuck is a coextensive horizontal second chuck which receives and showers reaction solution over all portions of each substrate. During the reaction process, both chucks are substantially submerged in reaction solution within a tank. At least one of the chucks is attached and controllable from a control arm. At least one of the chucks is rotated about a vertical axis at a slow speed during the reaction process. The axes of rotation of the two chucks may be coincident, or the axes may be offset from each other, and/or one or both axes may be offset from the chuck centerpoint(s). One of the chucks may also be periodically moved in a vertical direction relative to the other chuck.
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