| 摘要 |
PROBLEM TO BE SOLVED: To provide nondestructive measurement equipment that realizes more accurate measurement of information related to the depth direction of the microstructure of a semiconductor device including hall structure, line structure, and trench structure. SOLUTION: A substrate current measurement part 100 sequentially projects an electronic beam at a predetermined angle to scan a region with the microstructure by different irradiation energy, and then measures a substrate current at that time. A data storage part 200 stores a series of measurement data composed of a substrate current value, an irradiation energy value, and an irradiation coordinate value. A numerical operation processing part 300 outputs the film thickness value of a series of reference data giving the highest correlation value by reading out the series of the measurement data stored in the data storage part 200 to compute the correlation value between this series of the measurement data and the series of the reference data previously prepared. COPYRIGHT: (C)2004,JPO |
