发明名称 DEVICE FOR MANUFACTURING SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To make the configuration of a reaction chamber axially symmetric, to make uniform the flow of gas, to improve the in-face uniformity of the temperature of a substrate, and to simplify the mechanism. SOLUTION: This semiconductor manufacturing device is provided with a reaction chamber 10, a substrate mounting stands 5 and 6 housed in the reaction chamber on which a substrate 14 to be treated is mounted, a gas feeding part 15 for feeding reaction gas from the upper part of the substrate mounting stand, and an exhaust port 74 for exhausting the inside of the reaction chamber from the upper side of the reaction chamber. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004063661(A) 申请公布日期 2004.02.26
申请号 JP20020218292 申请日期 2002.07.26
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 SHIMA NOBUHITO;TOYODA KAZUYUKI;OSUMI NAOTO
分类号 C23C16/455;H01L21/205;(IPC1-7):H01L21/205 主分类号 C23C16/455
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