| 摘要 |
PROBLEM TO BE SOLVED: To prevent an active layer from being damaged and sticking impurities in a semiconductor laser apparatus. SOLUTION: A dummy layer is formed on the active layer (step S3), and the dummy layer is partially etched without exposing the active layer to make grating structure (step S5). Next, the dummy layer is removed by gas phase etching by a growing apparatus (step S7), the shape of the grating structure is transferred to the active layer to form a grating at the active layer (step S8), and a separation layer is formed on the grating without exposing the active layer to the atmosphere (step S9). Thus, etching when forming the grating structure is performed to the dummy layer, and furthermore the grating to the active layer is formed by gas phase etching, thereby preventing the active layer from being damaged at any steps. COPYRIGHT: (C)2004,JPO
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