| 摘要 |
PROBLEM TO BE SOLVED: To enable mixed raw gases to flow almost in parallel with a surface of a substrate in a semiconductor fabricating apparatus equipped with a horizontal MOCVD crystal growth furnace. SOLUTION: There are provided, at an upstream side of an internal reaction tube 102, an underlayer introducing passage 102a for introducing the raw gases containing 5 group atom sources, an middle-layer introducing passage 102b for introducing the raw gases containing 3 group atom sources, and an upper-layer introducing passage 102c for introducing the raw gases containing subflow gases. In the internal reaction tube 102, there is provided, at an upstream side of a susceptor 120, a gas throttling portion 102d for reducing the cross-sectional area of a flow passage of the mixed gases as well as for mixing the raw gases. The gas throttling portion 102d is formed by providing a sloping portion 104a where a second partition plate 104 is made lower in height toward a downstream of the gases. A portion between the gas throttling portion 102d of the second partition plate 104 and the susceptor 120 is provided so as to be almost in parallel with a surface of a wafer 110. COPYRIGHT: (C)2004,JPO
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