METHOD AND COMPOSITIONS FOR HARDENING PHOTORESIST IN ETCHING PROCESSES
摘要
A method for etching a wafer having a pattern of photoresist material thereon is disclosed. The method includes curing the photoresist material with a bromine containing plasma. Then a main etch of the wafer is carried out. A method for curing a pattern of photoresist material on a wafer is also disclosed. The curing method includes providing a bromine containing plasma and exposing the photoresist material to the plasma, such that a layer of the wafer below the photoresist material is not etched through. A composition of a plasma for curing a photoresist material on a wafer in a high density plasma processing device includes bromine.
申请公布号
WO2004017390(A1)
申请公布日期
2004.02.26
申请号
WO2003US24137
申请日期
2003.07.31
申请人
LAM RESERACH CORPORATION;TAYLOR, YOUSUN, KIM;NGUYEN, WENDY;LEE, CHRIS, G., N.
发明人
TAYLOR, YOUSUN, KIM;NGUYEN, WENDY;LEE, CHRIS, G., N.