发明名称 |
ETCHING METHOD OF SILICON SUBSTRATE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an etching method of a silicon substrate for reducing a reflectance ratio on a surface of the silicon substrate and manufacturing a solar battery having high conversion efficiency. <P>SOLUTION: The etching method has a first process for immersing the unprocessed silicon substrate in mixed acid water solution A comprising 36 weight % to 42 weight % of hydrofluoric acid and 6 weight % to 10 weight % of nitric acid and etching the substrate, and a second process for immersing the silicon substrate etched in the first process in mixed acid water solution B comprising 42 weight % to 46 weight % of hydrofluoric acid and 2 weight % to 6 weight % of nitric acid and etching the substrate. <P>COPYRIGHT: (C)2004,JPO</p> |
申请公布号 |
JP2004063744(A) |
申请公布日期 |
2004.02.26 |
申请号 |
JP20020219557 |
申请日期 |
2002.07.29 |
申请人 |
SHINRYO CORP |
发明人 |
KUROKI TATSUMI;NAKAJIMA SADAHIRO;TAWARA MINORU |
分类号 |
H01L21/308;H01L31/04;(IPC1-7):H01L21/308 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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