发明名称 ETCHING METHOD OF SILICON SUBSTRATE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide an etching method of a silicon substrate for reducing a reflectance ratio on a surface of the silicon substrate and manufacturing a solar battery having high conversion efficiency. <P>SOLUTION: The etching method has a first process for immersing the unprocessed silicon substrate in mixed acid water solution A comprising 36 weight % to 42 weight % of hydrofluoric acid and 6 weight % to 10 weight % of nitric acid and etching the substrate, and a second process for immersing the silicon substrate etched in the first process in mixed acid water solution B comprising 42 weight % to 46 weight % of hydrofluoric acid and 2 weight % to 6 weight % of nitric acid and etching the substrate. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004063744(A) 申请公布日期 2004.02.26
申请号 JP20020219557 申请日期 2002.07.29
申请人 SHINRYO CORP 发明人 KUROKI TATSUMI;NAKAJIMA SADAHIRO;TAWARA MINORU
分类号 H01L21/308;H01L31/04;(IPC1-7):H01L21/308 主分类号 H01L21/308
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