| 发明名称 |
INDIUM-CONTAINED WAFER AND METHOD OF MANUFACTURING THE SAME |
| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an indium-contained wafer and method of manufacturing the same which can measure the characteristics of the indium-contained wafer with good accuracy and surely remove mercury for application of mercury C-V method as non-destructive inspection. <P>SOLUTION: The indium-contained wafer is characterized by including a mercury removing layer consisting of an additional compound semiconductor formed on the outermost surface layer in order to remove mercury adhered to the surface. Moreover, the method of manufacturing the indium-contained wafer is characterized by removing the mercury adhered to the surface through the removal of the mercury removing layer after evaluation of the electrical characteristics of the wafer using the mercury adhered to the surface of the mercury removing layer as an electrode. <P>COPYRIGHT: (C)2004,JPO</p> |
| 申请公布号 |
JP2004063491(A) |
申请公布日期 |
2004.02.26 |
| 申请号 |
JP20020215456 |
申请日期 |
2002.07.24 |
| 申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
TANAKA SATOSHI;IWASAKI TAKASHI |
| 分类号 |
H01L21/66;H01L21/02;H01L21/306;H01L21/322;H01L31/0304;H01L31/10;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
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