| 摘要 |
1,037,616. Semi-conductor devices. SIEMENS & HALSKE A.G. April 15, 1964 [April 22, 1963], No. 15533/64. Heading H1K. [Also in Divisions G1 and H3] In order to derive signals corresponding to pressure fluctuations an element is used which radiates energy the frequency of which is dependent on the pressure applied to the element. It is preferred to use an AIII/BV semiconductor diode as the element, a galliumarsenide diode giving radiation with a wavelength of the order of 8600A being suitable. The junction between an N-type zone 2 and a P-type zone 3 is forward biased by electrodes (not shown) and the P-side surface 5 and N-side surface 6, which are parallel, together with the end faces, form the reflecting surfaces of a resonator. Emitted coherent radiation leaves through one of the end faces. Applied pressure, indicated by the arrows 7 and 8, alters the frequency radiated. To derive an electrical output signal that is a function of the radiation frequency the radiation may be directed through an optical filter converting the frequency modulation into an amplitude modulation and thence to a photo-resistor or photo-diode. The pressure sensitive element may be close to, or spaced from, the detector. In the latter case a parabolic reflector may be used at one or both ends of the system.
|
