| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for easily forming a minute thin film pattern with high accuracy and to provide a method for forming a magnetoresistance effect element by using the forming method of a thin film pattern. SOLUTION: A resist pattern is heat treated in a heating process at a temperature higher than the temperature in the succeeding process so that the resist pattern accurately maintains its profile in the succeeding process without deformation. Thereby, an isolated or open-type thin film pattern in a minute size can be easily formed with high accuracy. Since the resist pattern used as an etching mask and the resist pattern used as a lift-off mask are made common for use, the manufacturing processes can be simplified and an MR element can be easily formed with high accuracy without causing misalignment. COPYRIGHT: (C)2004,JPO |
