| 摘要 |
PROBLEM TO BE SOLVED: To provide a gate drive circuit for suppressing an excessive current upon short circuit of load in a power module employing an IGBT (insulated gate bipolar transistor) and preventing the thermal destruction of the IGBT in the power module. SOLUTION: The time change of a principal current is suppressed at a real time upon the short circuit of a load by a constitution. A coil unit 18 wound around a principal current circuit wiring 17 under electrically insulated condition is incorporated into and connected to one part of a gate wiring 16 for the IGBT 10. One end of the coil unit is connected to a gate terminal 12 while the other end of the same is connected to a gate bias power supply 15 through a resistor R<SB>G</SB>for suppressing a gate driving current. Therefore, the coil unit 18 induces an induced electromotive force based on only the principal current of the IGBT to control a gate employing the electromotive force of the coil unit in accordance with the time change of the principal current. COPYRIGHT: (C)2004,JPO
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