| 摘要 |
PROBLEM TO BE SOLVED: To easily and reproducibly perform seeding by inhibiting devitrification of a liquid sealant in growing a GaAs single crystal prepared through a LEC (liquid encapsulated Czochralski) technique. SOLUTION: In the process, the gallium arsenide single crystal is prepared through the LEC technique by putting a raw material melt and the liquid sealant into a heated crucible 5 placed inside a pressuretight vessel filled with an inert gas, bringing a seed crystal 11 into contact with the raw material melt and drawing up the seed crystal to grow the single crystal. The liquid sealant comprises boron trioxide as the main ingredient and at least either gallium trioxide or arsenic trioxide. The seeding is performed under the conditions that the OH group content in boron trioxide is set at lower than 100 ppm to prevent boron trioxide from clouding in preparing a gallium trioxide melt. COPYRIGHT: (C)2004,JPO
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