发明名称 |
Thin dielectric layers and non-thermal formation thereof |
摘要 |
A method of forming a dielectric layer suitable for use as the gate dielectric layer in a MOSFET includes passivating the surface of a semiconductor substrate at a temperature less than approximately 80° C. and nitridizing the passivation layer. In particular embodiments, passivating a silicon wafer includes forming a hydroxy-silicate layer at approximately 24° C. In a further aspect of the present invention, an integrated circuit includes a plurality of insulated gate field effect transistors, wherein various ones of the plurality of transistors have gate dielectric layers of the nitridized passivation layer.
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申请公布号 |
US2004036123(A1) |
申请公布日期 |
2004.02.26 |
申请号 |
US20030649086 |
申请日期 |
2003.08.26 |
申请人 |
KEATING STEVEN J.;CHAU ROBERT S.;ARGHAVANI REZA;KAVALIEROS JACK T.;BARLAGE DOUGLAS W. |
发明人 |
KEATING STEVEN J.;CHAU ROBERT S.;ARGHAVANI REZA;KAVALIEROS JACK T.;BARLAGE DOUGLAS W. |
分类号 |
H01L21/28;H01L21/314;H01L29/51;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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