发明名称 |
Method of making programmable resistance memory element |
摘要 |
A method of making an electrically operated memory element. The memory element having a contact in electrical communication with a memory material programmable to at least a first resistance state and a second resistance state. Preferably, the contact includes at least a first region having a first resistivity and a second region having a second resistivity greater than the first resistivity where the more resistive region is adjacent to the memory material.
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申请公布号 |
US2004038445(A1) |
申请公布日期 |
2004.02.26 |
申请号 |
US20030649562 |
申请日期 |
2003.08.26 |
申请人 |
LOWREY TYLER;HUDGENS STEPHEN J.;KLERSY PATRICK J. |
发明人 |
LOWREY TYLER;HUDGENS STEPHEN J.;KLERSY PATRICK J. |
分类号 |
G11C11/56;H01L27/24;H01L45/00;(IPC1-7):H01L21/06 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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