METHOD FOR ETCHING ALUMINUM LAYER USING HARD MASK AND METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for etching an aluminum layer using a hard mask and a method for forming a metal line of a semiconductor device are provided to be capable of minimizing a bad influence due to particles in carrying out an etching process for forming a metal line pattern and restraining the generation of cone type defects. CONSTITUTION: An aluminum layer(20a) is formed at the upper portion of a semiconductor substrate(10). A hard mask pattern(30a) is formed at the upper portion of the resultant structure for partially exposing the aluminum layer. An etching process is carried out at the aluminum layer by using etching gas mixed with Cl2 and N2. At this time, the Cl2 and N2 have a flow rate of 1:1 -1:10. Preferably, the hard mask pattern is made of oxide, nitride, or oxide nitride.