发明名称 NON-VOLATILE MEMORY AND NON-VOLATILE MEMORY DATA REWRITING METHOD
摘要 A nonvolatile memory and a data rewriting method of the nonvolatile memory that can readily detect a state of operation at a time of a system failure due to a power failure or the like and quickly and reliably restore the nonvolatile memory to a normal storage state by a simple method. In the nonvolatile memory including a physical block as a storage unit, the physical block having a data area ( 1 ) and a redundant area ( 2 ), the redundant area ( 2 ) includes: a logical block address storing area ( 3 ) for storing an address of a corresponding logical block; a previously used physical block address storing area ( 4 ) for storing an address of a physical block to be erased; and a status information storing area ( 6 ) for storing status information for distinguishing a state of operation in each stage occurring in performing data rewriting operation on the physical block.
申请公布号 KR20040017276(A) 申请公布日期 2004.02.26
申请号 KR20047000158 申请日期 2002.07.19
申请人 发明人
分类号 G06F12/16;G06F11/14;G11B20/18;G11C16/10 主分类号 G06F12/16
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