| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an abrasive composition for CMP process of a semiconductor device having a copper film and a tantalum compound, having high selectivity to have high abrasion rate of copper and small abrasion rate of the tantalum compound and giving a smooth surface of the copper film. <P>SOLUTION: The abrasive composition of Example 1 is produced by mixing an abrasive material composed of polymethyl methacrylate (PMMA) particles having an average particle diameter of 30 nm and a tensile strength of 48 N/mm<SP>2</SP>at 23°C, benzotriazole, hydrogen peroxide and an organic acid into an ion-exchanged water filtered with a cartridge filter of 0.5μm to get the concentration shown in Table 1 and stirring the mixture with a high-speed homogenizer to uniformly disperse the components. <P>COPYRIGHT: (C)2004,JPO</p> |
