| 摘要 |
PROBLEM TO BE SOLVED: To provide a Ti raw material capable of more easily being thermally decomposed and piling than Ti(OiPr)<SB>2</SB>(dpm)<SB>2</SB>does even if a substrate temperature is low as≤450°C, and having a wide allowing margin of the temperature for obtaining a prescribed membrane composition in a CVD by supplying a raw material by a solution-evaporating method, and to provide a method for producing a PZT membrane by using the same. SOLUTION: This dialkoxy-bis(diisobutylmethanate)titanium used for a chemical gas phase growth is expressed by general formula: Ti(OR)<SB>2</SB>(dibm)<SB>2</SB>(wherein, R is methyl, ethyl, n-propyl, n-butyl, i-butyl, s-butyl, t-butyl, n-pentyl, neo-pentyl, i-amyl, s-amyl and t-amyl; and dibm is diisobutylylmethanate). In the method for producing a PZT thin membrane, a method for chemical gas phase growth uses the titanium complex as the Ti source. COPYRIGHT: (C)2004,JPO
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