发明名称 METHOD FOR FORMING ORGANIC INSULATING FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To solve the problem that there is possibility that yield is deteriorated since impurity such as metallic oxide is adhered to the surface of wiring in a manufacturing process, and as a result, the adhesive force of the wiring and an inter-layer film formed on the upper face of the wiring is weakened, and the inter-layer film and an organic insulating film formed on this film are easily peeled from the wiring. SOLUTION: Wiring is formed, and the surface of wiring is exposed to acid so that impurity such as metallic oxide adhered to the surface of the wiring can be removed. Afterwards, an inter-layer film with aminosilane system compounds as materials is formed on the upper face of the wiring, and an organic insulating film is formed on the upper face of the inter-layer film. Thus, the wiring and the organic insulating film can be suitably adhered to each other, and possibility that the inter-layer film and the organic insulating film are peeled from the wiring can be reduced. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004063672(A) 申请公布日期 2004.02.26
申请号 JP20020218426 申请日期 2002.07.26
申请人 OKI ELECTRIC IND CO LTD 发明人 OKAJIMA TAKEHIKO;IKETANI MASAHISA
分类号 H01L21/28;H01L21/306;H01L21/312;H01L21/3205;H01L21/3213;H01L21/44;H01L21/768;H01L23/52;H01L23/522;(IPC1-7):H01L21/312;H01L21/320 主分类号 H01L21/28
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