发明名称 |
Separation-material composition for photo-resist and manufacturing method of semiconductor device |
摘要 |
One example of a separation-material composition for a photo-resist according to the present invention comprises 5.0 weight % of sulfamic acid, 34.7 weight % of H2O, 0.3 weight % of ammonium 1-hydrogen difluoride, 30 weight % of N,N-dimethylacetamide and 30 weight % of diethylene glycol mono-n-buthyl ether. Another example of a separation-material composition for a photo-resist according to the present invention comprises 1-hydroxyethylidene-1, 3.0 weight % of 1-diphosphonic acid, 0.12 weight % of anmonium fluoride, 48.38 weight % of H2O and 48.5 weight % of diethylene glycol mono-n-buthl ether. The separation-material composition for the photo-resist is mainly used for a medicinal liquid washing liquid/scientific liquid in order to remove the photo-resist residuals and the by-product polymer after an ashing process of a photo-resist mask. It can propose a separation-material composition for a photo-resist such that the photo-resist residuals and the by-product polymer are easily removed after a dry etching process and at the same time the low dielectric-constant insulation film is avoided from erosion and oxidization.
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申请公布号 |
US2004038154(A1) |
申请公布日期 |
2004.02.26 |
申请号 |
US20030640389 |
申请日期 |
2003.08.14 |
申请人 |
MURAMATSU MASAFUMI;IWAMOTO HAYATO;ASADA KAZUMI;SUZUKI TOMOKO;HIRAGA TOSHITAKA;AOYAMA TETSUO |
发明人 |
MURAMATSU MASAFUMI;IWAMOTO HAYATO;ASADA KAZUMI;SUZUKI TOMOKO;HIRAGA TOSHITAKA;AOYAMA TETSUO |
分类号 |
G03F7/42;H01L21/02;H01L21/027;H01L21/304;H01L21/311;H01L21/3213;H01L21/768;(IPC1-7):G03F7/30;G03F7/20;G03F7/32;G03F7/36;G03F7/40;G03F7/16 |
主分类号 |
G03F7/42 |
代理机构 |
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主权项 |
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地址 |
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