发明名称 |
ISOLATED COMPLEMENTARY MOS DEVICES IN EPI-LESS SUBSTRATE |
摘要 |
A structure for electrically isolating a semiconductor device is formed by implanting dopant into a semiconductor substrate that does not include an epitaxial layer. Following the implant the structure is exposed to a very limited thermal budget so that dopant does not diffuse significantly. As a result, the dimensions of the isolation structure are limited and defined, thereby allowing a higher packing density than obtainable using conventional processes which include the growth of an epitaxial layer and diffusion of the dopants. In one group of embodiments, the isolation structure includes a deep layer and a sidewall which together form a cup-shaped structure surrounding an enclosed region in which the isolated semiconductor device may be formed. The sidewalls may be formed by a series of pulsed implants at different energies, thereby creating a stack of overlapping implanted regions. |
申请公布号 |
WO2004017395(A1) |
申请公布日期 |
2004.02.26 |
申请号 |
WO2003US25361 |
申请日期 |
2003.08.13 |
申请人 |
ADVANCED ANALOGIC TECHNOLOGIES, INC. |
发明人 |
WILLIAMS, RICHARD, K.;CORNELL, MICHAEL, E.;CHAN, WAI, TIEN |
分类号 |
H01L21/331;H01L21/329;H01L21/761;H01L21/8222;H01L21/8238;H01L21/8248;H01L21/8249;H01L27/06;H01L27/08;H01L27/092;H01L29/732;H01L29/861 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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