发明名称 CURRENT CONFINEMENT, CAPACITANCE REDUCTION AND ISOLATION OF VCSELS USING DEEP ELEMENTAL TRAPS
摘要 A VCSEL having a current confinement structure comprised of deep traps formed by implanting either iron (Fe) or chrome (Cr) into a group III-V compound, such as InP or GaAs. Beneficially, the VCSEL is part of an array of VCSELs produced on a common substrate.
申请公布号 WO03058772(A3) 申请公布日期 2004.02.26
申请号 WO2002US39823 申请日期 2002.12.13
申请人 HONEYWELL INTERNATIONAL INC. 发明人 JOHNSON, RALPH, H.
分类号 H01S5/183;H01S5/20;H01S5/42 主分类号 H01S5/183
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