发明名称 |
CURRENT CONFINEMENT, CAPACITANCE REDUCTION AND ISOLATION OF VCSELS USING DEEP ELEMENTAL TRAPS |
摘要 |
A VCSEL having a current confinement structure comprised of deep traps formed by implanting either iron (Fe) or chrome (Cr) into a group III-V compound, such as InP or GaAs. Beneficially, the VCSEL is part of an array of VCSELs produced on a common substrate. |
申请公布号 |
WO03058772(A3) |
申请公布日期 |
2004.02.26 |
申请号 |
WO2002US39823 |
申请日期 |
2002.12.13 |
申请人 |
HONEYWELL INTERNATIONAL INC. |
发明人 |
JOHNSON, RALPH, H. |
分类号 |
H01S5/183;H01S5/20;H01S5/42 |
主分类号 |
H01S5/183 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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