METHOD FOR MANUFACTURING STORAGE NODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a storage node of a semiconductor device is provided to be capable of preventing the damage of a bevel portion of a semiconductor wafer edge in carrying out an etch-back process for storage node separation. CONSTITUTION: A mold insulating layer pattern(106) is formed at the upper portion of a semiconductor wafer. A polysilicon layer is formed along the upper surface of the resultant structure for forming a storage node(108a). A photoresist layer(110) is thickly formed at the upper portion of the polysilicon layer for completely filling the mold insulating layer pattern. A storage node separating process is carried out on the resultant structure by etching the photoresist layer and the polysilicon layer until the mold insulating layer pattern is exposed.